SiC Silicon Carbide Product Introduction: A High-Performance Material for Modern Industries
SiC Silicon Carbide is a compound of carbon and silicon, featuring high hardness, high thermal conductivity, high-temperature resistance, and excellent corrosion resistance. It is widely used in semiconductors, aerospace, automotive, optoelectronics, chemical, and energy industries. With the rapid growth of new energy vehicles and third-generation semiconductors, SiC materials are becoming a key technology.
Main Properties of SiC Silicon Carbide
- High Hardness & Wear Resistance – Mohs hardness of 9.2, second only to diamond.
- High Thermal Conductivity – About 3 times that of aluminum for efficient heat dissipation.
- High-Temperature Stability – Maintains structure above 1600°C.
- Chemical Inertness & Corrosion Resistance – Resistant to acids, alkalis, and most chemicals.
- High Breakdown Voltage & Low Dielectric Constant (for electronic-grade SiC) – Suitable for high-voltage, high-frequency devices.
Common SiC Products
- Electronic-grade SiC wafers for MOSFETs, Schottky diodes, EV inverters, solar inverters, and 5G base stations.
- SiC ceramic parts such as seals, bearings, nozzles, and heat exchangers.
- SiC heating elements for furnaces and thermal processing.
- Abrasives and cutting tools for glass, ceramics, and stone.
- SiC optical & protective materials for telescope mirrors and armor plates.
Applications
Semiconductors, EVs, aerospace, defense, chemicals, energy, and industrial manufacturing.
Future Trends
- Increase wafer size (6” to 8”) to reduce costs.
- Improve purity and defect control.
- Expand to aerospace and quantum technologies.
Applications and Advantages of Silicon Carbide (SiC) in Five Key Industries
Silicon Carbide (SiC) is widely recognized for its high hardness, high thermal conductivity, high temperature resistance, and corrosion resistance, making it an essential material in modern manufacturing and advanced technology. It plays a crucial role in Semiconductors & Electronics, New Energy Vehicles (EV), Aerospace & Defense, Chemical & Energy, and Industrial Manufacturing, each with distinct processes and performance benefits.
1. Semiconductors & Electronics
- Process: Single-crystal SiC ingot growth (PVT, CVD), wafer slicing & polishing, epitaxial growth, device fabrication (MOSFET, Schottky diode).
- Advantages: High voltage resistance, low switching loss, high thermal conductivity, stable operation over 200°C.
2. New Energy Vehicles (EV)
- Process: SiC MOSFET & diode packaging into inverter modules, system integration with OBC and DC-DC converters, durability testing under high temperature & vibration.
- Advantages: 5–10% efficiency improvement, supports 800V fast charging, smaller & lighter inverters.
3. Aerospace & Defense
- Process: SiC ceramic sintering for turbine blades & thermal shields, microwave device packaging, ultra-precision polishing for satellite mirrors.
- Advantages: High-temperature oxidation resistance, dimensional stability, superior microwave transmission.
4. Chemical & Energy
- Process: Corrosion-resistant pump impellers, SiC heat exchangers, crucibles for photovoltaic crystal growth.
- Advantages: Acid/alkali resistance, high heat transfer efficiency, extreme temperature & pressure tolerance.
5. Industrial Manufacturing
- Process: Abrasives & cutting tools, SiC heating elements, ballistic protection plates.
- Advantages: Longer tool life, high-temperature stability, superior protection performance.
SEO Keywords: Silicon Carbide, SiC wafer, SiC applications, third-generation semiconductors, EV power module, aerospace SiC materials, corrosion-resistant SiC components, SiC heating elements, SiC abrasives, industrial SiC.
1. SiC Ingots
Application: Substrate for third-generation semiconductor wafers, power device manufacturing.
| Parameter | Specification Range |
|---|---|
| Crystal Type | 4H-SiC / 6H-SiC |
| Diameter | 100mm / 150mm / 200mm |
| Length | 10mm ~ 60mm |
| Conductivity Type | N-type / Semi-insulating |
| Micropipe Density | ≤ 0.1 cm⁻² |
| Resistivity | 0.015~0.028 Ω·cm (N-type) |
| Growth Method | PVT (Physical Vapor Transport) |
2. SiC Wafers
Application: MOSFET, Schottky diode, power module manufacturing.
| Parameter | Specification Range |
|---|---|
| Wafer Diameter | 100mm / 150mm / 200mm |
| Thickness | 350 ± 25 μm (4-inch), 500 ± 25 μm (6-inch) |
| Epi Thickness | 2 μm ~ 20 μm |
| Epi Doping Concentration | 1×10¹⁵ ~ 1×10¹⁷ cm⁻³ |
| Surface Roughness (RMS) | ≤ 0.3 nm |
| Dislocation Density | ≤ 5×10³ cm⁻² |
3. SiC Power Devices
Application: EV inverters, power converters, industrial automation drives.
| Product Type | Example Specifications |
|---|---|
| SiC MOSFET | 650V / 1200V / 1700V |
| SiC Schottky Diode (SBD) | 650V / 1200V, 2A ~ 50A |
| SiC Power Module | 50kW ~ 300kW, supports 800V platform |
| Package Type | TO-247, TO-220, D2PAK, Module (Half-Bridge, Full-Bridge) |
4. SiC Ceramic Parts
Application: Aerospace thermal protection, chemical corrosion resistance, semiconductor equipment components.
| Product Type | Example Specifications |
|---|---|
| Turbine Blades | RBSiC, heat resistance ≥ 1600°C |
| Pump Impellers | SiSiC / RBSiC, hardness ≥ 25 GPa |
| Sealing Rings | Surface roughness Ra ≤ 0.1 μm |
| Optical Mirror Substrates | Flatness ≤ λ/10, reflectivity ≥ 98% (after coating) |
5. SiC Abrasives & Cutting Tools
Application: Hard-brittle material machining, metal grinding, glass cutting.
| Product Type | Example Specifications |
|---|---|
| Black SiC Abrasives | Grit #16 ~ #1200 |
| Green SiC Abrasives | Purity ≥ 99%, grit #46 ~ #3000 |
| SiC Grinding Wheels | Outer diameter 100mm ~ 500mm |
| SiC Cutting Discs | Thickness 0.5mm ~ 3mm |
6. SiC Heating Elements
Application: High-temperature furnaces, glass manufacturing, ceramic sintering.
| Parameter | Specification Range |
|---|---|
| Shape | Rod, U-shape, Spiral |
| Diameter | 8mm ~ 55mm |
| Length | 200mm ~ 2000mm |
| Surface Load | 5 ~ 30 W/cm² |
| Operating Temperature | 800°C ~ 1600°C |
#SiC Silicon Carbide, #Silicon Carbide Applications, #Third-Generation Semiconductors, #SiC Wafers, #EV Power Modules, #Aerospace SiC Materials, #Chemical Corrosion-Resistant Parts, #SiC Heating Elements, #SiC Abrasives, #Industrial Silicon Carbide
#CNC Machining, #CNC Precision Machining, #Semiconductor Components, #Automation Equipment, #Precision Components, #Robot Arms, #Stainless Steel Machining, #Engineering Plastics, #Ceramic Machining
Yong Yi Technology Co., Ltd.
No. 188-9, Section 1, Dafeng Road, Tanzi District, Taichung City, Taiwan 42756
Call +886-4-25341382
yongyi-sales@umail.hinet.net
Email justinwu6767@gmail.com